Against the backdrop of explosive growth in demand for DRAM, driven by the AI infrastructure boom and active purchasing by hyperscalers, Intel intends to seize the moment and launch a new memory standard together with Saimemory, a subsidiary of SoftBank.
According to sources, the partners are working on Z-Angle Memory (ZAM) technology, an alternative to traditional solutions such as HBM. The development began as part of the Advanced Memory Technology (AMT) program, initiated by the U.S. Department of Energy, where Intel demonstrated its work in next-generation DRAM bonding. Although SoftBank does not disclose details of ZAM's positioning in its official materials, the concept itself points to a serious departure from classical memory architecture.
The key idea behind ZAM is the so-called "Z-angle" connection of layers. Unlike standard approaches, where interlayer connections run strictly vertically, the new scheme involves diagonal routing within chip stacks. This makes it possible to use silicon area for memory cells more efficiently, increase density, and simultaneously reduce thermal resistance.