Until now, the company has adhered to a two-year standard update cycle, but now considers it not fast enough.
Samsung Electronics intends to switch to an annual development cycle for new generations of HBM (High Bandwidth Memory) memory in order to keep up with the rapid growth of the artificial intelligence market.
HBM is a key component of modern AI accelerators used in data centers and high-performance computing. Until now, the company has adhered to a two-year standard update cycle, but now considers it not fast enough. According to Korean media, Samsung is already implementing a plan to release a new generation of HBM every year — in sync with the releases of accelerators from major customers, including NVIDIA.
Currently, the company's current product is HBM3E, and the next step will be HBM4, which is expected to be launched this year. The new memory will be used in advanced platforms such as Vera Rubin from NVIDIA and Instinct MI400 from Advanced Micro Devices.
Switching to an accelerated development cycle will allow Samsung to better match industry trends, where the release of AI accelerators has already switched to an annual basis. This will also strengthen the company's position in competition with memory manufacturers such as Micron Technology and SK Hynix.
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